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23.6. Flash Memory Characteristics
Unless otherwise specified: V
Item
*1
Programming count
*1
Assumed that Erasing + Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
23.7. Input/Output Port (PPORT) Characteristics
Unless otherwise specified: V
Item
High level Schmitt input
threshold voltage
Low level Schmitt input
threshold voltage
Schmitt input hysteresis voltage
High level output current
Low level output current
Leakage current
Input pull-up resistance
Input pull-down resistance
Pin capacitance
S1C31D50 TECHNICAL MANUAL
(Rev. 1.00)
= 2.4 to 5.5 V, V
= 0 V, Ta = -40 to 85 °C
DD
SS
Symbol
C
Programmed data is guaranteed to be retained
FEP
for 10 years.
= 1.8 to 5.5 V, V
= 0 V, Ta = -40 to 85 °C
DD
SS
Symbol
VT+
VT-
DVT
IOH
VOH = 0.9 × VDD
IOL
VOL = 0.1 × VDD
ILEAK
RINU
RIND
CIN
High level
Low level
Seiko Epson Corporation
Condition
Condition
V
V
V
T-
T+
DD
Min.
Typ.
Max.
1,000
–
–
Min.
Typ.
Max.
0.5 × VDD
–
0.8 × VDD
0.2 × VDD
–
0.5 × VDD
180
–
–
–
–
-0.5
0.5
–
–
-150
–
150
100
200
500
100
200
500
–
–
15
Unit
times
Unit
V
V
mV
mA
mA
nA
KΩ
KΩ
pF
23-9
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