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OSC3 oscillator circuit characteristics
Unless otherwise specified: VDD = 1.8 to 5.5 V, VSS = 0 V, Ta = 25 °C
Item
Oscillation start time
Internal gate capacitance
Internal drain capacitance
OSC3 CR oscillator characteristics
Unless otherwise specified: VDD = 1.8 to 5.5 V, VSS = 0 V, Ta = 25 °C
Item
Internal oscillator
oscillation start time
Oscillation frequency
OSC3 oscillation frequency-temperature characteristic
EXOSC external clock input characteristics
Unless otherwise specified: V
= 1.8 to 5.5 V, V
DD
Item
EXOSC external clock duty ratio
High level Schmitt input threshold voltage V
Low level Schmitt input threshold voltage
Schmitt input hysteresis voltage
V
T+
EXOS
C
23-8
Symbol
Condition
t
Crystal resonator
sta3
Ceramic resonator
C
GI3
C
DI3
Symbol
Condition Ta
t
CLGOSC3.OSC3MD bit = 0
staI
f
CLGOSC3.OSC3FQ[1:0] bits = 0x3
OSC3
CLGOSC3.OSC3FQ[1:0] bits = 0x3
CLGOSC3.OSC3FQ[1:0] bits = 0x3
CLGOSC3.OSC3FQ[1:0] bits = 0x1
CLGOSC3.OSC3FQ[1:0] bits = 0x0
CLGOSC3.OSC3FQ[1:0] bits = 0x3
Right after auto trimming
= 0 V, Ta = -40 to 85 °C
SS
Symbol
t
t
= t
EXOSCD
EXOSCD
EXOSCH
T+
V
T-
DV
T
t
EXOSC =
t
1/f
EXOSCH
V
T+
V
T-
Seiko Epson Corporation
Min.
Ta
Min.
0 to 50 ℃
15.68
-20 to 60℃
15.60
-40 to 85℃
15.44
-40 to 85℃
7.7
-40 to 85℃
3.8
-
15.84
Condition
Min.
/t
EXOSC
0.5 × V
0.2 × V
180
t
EXOSC =
1/f
t
EXOSC
H
V
T+
V
T-
Typ.
Max.
Unit
–
–
20
ms
–
–
1
ms
–
5
–
pF
–
5
–
pF
Typ.
Max.
Unit
–
–
3
µs
16
16.32
MHz
16
16.40
MHz
16
16.56
MHz
8.3
8.9
MHz
4.2
4.6
MHz
16
16.16
MHz
Typ.
Max.
Unit
46
–
54
%
–
0.8 × V
V
DD
DD
–
0.5 × V
V
DD
DD
–
–
mV
V
T+
S1C31D50 TECHNICAL MANUAL
(Rev. 1.00)
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