Table 22.20 Flash Memory Characteristics (2)
Conditions: V
= 3.0 to 3.6 V, AV
CC
T
= 0 to +75°C (Programming/erasing operating temperature range: regular
a
specification)
T
= 0 to +85°C (Programming/erasing operating temperature range: wide-range
a
specification)
Item
1
2
Programming time *
*
*
Erase time *
1
*
3
*
5
Reprogramming count
Programming Wait time after SWE bit setting *
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy
write *
1
Wait time after PV bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Erase
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy
write *
1
Wait time after EV bit clear *
Maximum erase count *
Notes: *1 Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.
*2 Programming time per 32 bytes (Shows the total period for which the P-bit in the flash
memory control register (FLMCR) is set. It does not include the programming
verification time)
*3 Block erase time (Shows the total period for which the E-bit in FLMCR is set. It does not
include the erase verification time)
= 3.0 to 3.6 V, V
CC
4
1
1
1
*
4
1
1
1
1
1
*
1
1
1
*
5
1
1
1
1
1
*
5
= AV
SS
SS
Symbol
Min
Typ
t
—
10
P
t
—
100
E
N
—
—
WEC
x
10
—
y
50
—
z
150
—
α
10
—
β
10
—
γ
4
—
ε
2
—
η
4
—
4
N
—
—
x
10
—
y
200
—
z
5
—
α
10
—
β
10
—
γ
20
—
ε
2
—
η
5
—
N
120
—
= 0 V
Max
Unit
Test Condition
200
ms/
32 bytes
1200
ms/block
100
Times
—
µs
—
µs
500
µs
—
µs
—
µs
—
µs
—
µs
—
µs
403
Times
—
µs
—
µs
10
ms
—
µs
—
µs
—
µs
—
µs
—
µs
240
Times
693