Figure 17.16 Power-On/Off Timing (Boot Mode) - Hitachi H8/3062 Hardware Manual

7. Do not use interrupts while flash memory is being programmed or erased.
All interrupt requests, including NMI, should be disabled during FWE application to give priority
to program/erase operations (including emulation in RAM).
Bus release must also be disabled.
8. Do not perform additional programming. Erase the memory before reprogramming.
In on-board programming, perform only one programming operation on a 32-byte programming
unit block. In PROM mode, too, perform only one programming operation on a 128-byte
programming unit block. Programming should be carried out with the entire programming unit
block erased.
• Use byte access on the registers that control the flash memory (FLMCR, EBR, FLMSR, and
RAMCR).
φ
V
CC
FWE
*1
MD to MD
2 0
RES
SWE bit
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
Notes: *1 Except when switching modes, the level of the mode pins (MD
by pulling the pins up or down.
*2 See 22.2.6 Flash Memory Characteristics.
Wait time:
t
OSC1
t
MDS
t
MDS
SWE set
*2

Figure 17.16 Power-On/Off Timing (Boot Mode)

Programming/
erasing possible
x
Min 0 µs
SWE cleared
to MD
2
Min 0 µs
) must be fixed until power-off
0
517