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Normal mode
FWE=1
FWE=0
On-board
programming mode
software reprogramming
disable state
Notes:
1. Do not make a state transition by setting or clearing two or more
2. After transition from the erase mode to the erase setup state, do
3. After transition from the programming mode to the program setup
state, do not switch to the programming mode without going through the
software reprogramming enable state.
Figure 15-10 State Transition by Setting of Each Bit of FLMCR
15.5.1
Program Mode
Follow the procedure shown in the program/program-verify flowchart in figure 15-11 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 32 bytes at a
time.
For the wait time (x, y, z, α, β, γ, ε, η) after setting or clearing each bit in the flash memory
control register (FLMCR) and the maximum programming count (N), see table 18-15 in section
18.2.5, Flash Memory Characteristics.
460
*
1
SWE=1
Software
reprogramming
enable state
SWE=0
: Normal mode
bits at the same time.
not make a transition to the erase mode without going through the
software reprogramming enable state.
Erase setup state
Erase-verify mode
Program setup state
Program-verify mode
: On-board programming mode
*
2
E=1
E=0
3
*
P=1
Programming mode
P=0
Erase mode
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