User Program Mode - Samsung S3F84B8 User Manual

S3F84B8_UM_REV 1.00

19.1.3 USER PROGRAM MODE

This mode supports sector erase, byte programming, byte read, and protection mode (Hard Lock Protection).
S3F84B8 has an internal pumping circuit to generate high voltage. Therefore, there is no need to supply high
programming voltage to the Vpp (Test) pin. To program flash memory in this mode, several control registers are
used.
19.1.4 SMART OPTION
Smart option specifies the Program Memory option for starting condition of the chip. The Program Memory
Addresses used by the Smart option range from 003CH to 003FH. However, S3F84B8 only uses 003FH. The
default value of Smart option bits in Program Memory is 0FFH. Before executing the Program Memory code, you
can set the Smart option bits according to the hardware option you want to select.
LVR enable
or disable bit:
0 = Disable
1 = Enable
NOTES :
1 . The unused bits of 3CH, 3DH, 3EH, 3FH must be logic "1".
2 . When LVR is enabled, LVR level must be set to appropriate value .
3 . P0.2 has only input (without pull -up) function when sets 003F .2 as 0.
4 . You must set P0.0,P0.1,P0.2 function on smart option. For example, if you select XIN (P0 .0)/XOUT (P0.1)/ nRESET(P0.2)
function by smart option , you can't change them to Normal I/O after reset operation.
ROM Address : 003CH
MSB .7 .6 . 5
ROM Address: 003DH
MSB .7 .6 . 5
ROM Address: 003EH
MSB .7 .6 .5
ROM Address: 003FH
MSB .7 .6 . 5
LVR level selection
101 = 1.9 V
110 = 2.3 V
100 = 3.0 V
001 = 3.6V
011 = 3.9 V
Figure 19-1
19 EMBEDDED FLASH MEMORY INTERFACE
.4 .3 .2 . 1 .0
Not used
.4 .3 .2 . 1 .0
Not used
.4 .3 .2 .1 .0
Not used
.4 .3 .2 .1 .0
P0.2/nRESET pin
selection bit:
Not used
0 = P0.2 pin enable
1 = nRESET
Pin enable
Smart Option
19-2
LSB
LSB
LSB
LSB
Oscillation selection bit :
00 = External crystal (Xin/Xtout pin
enable )
01 = External RC(Xin /Xtout pin enable)
10 = Internal oscillator (0.5MHz)
(P0.0,P0.1 are normal IOs)
11 = Internal oscilator (8 MHz)
(P0.0,P0.1 are normal IOs)