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Hitachi H8S/2633 Hardware Manual page 202

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7.5.7
Precharge State Control
When accessing DRAM, it is essential to secure a time for RAS precharging. In this LSI, it is
therefore necessary to insert 1 T
MCR to 1, T
can be changed from 1 state to 2 states. Set the appropriate number of T
P
according to the type of DRAM connected and the operation frequency of the LSI. Figure 7-16
shows the timing when T
Setting the TPC bit to 1 also sets the refresh cycle T
A23 to A0
CSn (RAS)
CAS, LCAS
HWR (WE)
Read
D15 to D0
CAS, LCAS
HWR (WE)
Write
D15 to D0
Note: n= 2 to 5
176
state when accessing DRAM space. By setting the TPC bit of the
P
is set for 2 states.
P
T
p1
ø
Figure 7-16 Timing With Two Precharge Cycles
to 2 states.
P
T
T
p2
r
row
cycles
P
T
T
c1
c2
column
RCTS= 0
RCTS= 1

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