Toshiba TC9349AFG Manual page 20

Cmos digital integrated circuit silicon monolithic
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Mnemonic
Instruction
Function
Set
LD
r, M*
ST
M*, r
MVSR M1, M2
MVIM
M, I
MVGD r, M
MVGS M, r
STIG
I*
MVAR
IN1
M, C
OUT1
M, C
IN2
M, C
OUT2
M, C
IN3
M, C
OUT3
M, C
ORR
r, M
ANDR r, M
ORIM
M, I
ANIM
M, I
XORIM M, I
XORR r, M
Function
Operation
Load memory to
r ← (M*)
general register
Store memory to
M* ← (r)
general register
Move memory to
(DR, DC1) ← (DR,
memory in same
DC2)
row
Move immediate
M ← I
data to memory
Move memory to
destination memory
[(G), (r)] ← (M)
referring to
G-register and
general register
Move source
memory referring to
(M) ← [(G), (r)]
G-register and
general register to
memory
Move immediate
G ← I*
data to G-register
Move DATA register
data to DAL
AR← (DATA)
address register
Input IN1 port data
M ← [IN1] C
to memory
Output contents of
[OUT1] C ← (M)
memory to OUT1
port
Input IN2 port data
M ← [IN2] C
to memory
Output contents of
[OUT2] C ← (M)
memory to OUT2
port
Input IN3 port data
M ← [IN3] C
to memory
Output contents of
[OUT3] C ← (M)
memory to OUT3
port
Logical OR of
r ← (r) ∨ (M)
general register and
memory
Logical AND of
r ← (r) ∧ (M)
general register and
memory
Logical OR of
M ← (M) ∨ I
memory and
immediate data
Logical AND of
M ← (M) ∧ I
memory and
immediate data
Logical exclusive
M ← (M) ∀ I
OR of memory and
immediate data
Logical exclusive
OR of general
r ← (r) ∀ (M)
register and
memory
20
TC9349AFG
Machine Language (16 Bits)
IC
A
B
(6 Bits)
(2 Bits)
(4 Bits)
DR*
0101
DC
(4 bits)
DR*
0110
DC
(4 bits)
001111
DR
DC1
000111
DR
DC
011110
DR
DC
011111
DR
DC
111111
I*
111111
111000
DR
DC
111011
DR
DC
111001
DR
DC
111100
DR
DC
111010
DR
DC
111101
DR
DC
001100
DR
DC
001101
DR
DC
000100
DR
DC
000101
DR
DC
000110
DR
DC
001110
DR
DC
2006-02-24
C
(4 Bits)
RN
RN
DC2
I
RN
RN
0010
1001
CN
CN
CN
CN
CN
CN
RN
RN
I
I
I
RN

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