Toshiba TC9349AFG Manual page 125

Cmos digital integrated circuit silicon monolithic
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I/O Ports 1 to 6 (P1-0 to P16-3) , Serial Interface
Characteristics
"H" level
Output current
"L" level
Input leak current
"H" level
Input voltage
"L" level
Input pull-up/pull-down resistance
Input pull-down resistance
SCK input frequency
Note 4: The electrical characteristics in serial interface conditions are the same as for the I/O ports.
LCD Driver Output
(COM1
Characteristics
"H" level
Output current
"L" level
1/3 V
LCD
Bias voltage
1/2 V
LCD
2/3 V
LCD
LCD driver operating current
Note 5: This value increases when the LCD driver circuit is used.
Test
Symbol
Circuit
V
DD
I
V
OH1
OH
(except for I/O ports 6,8 and P9-0)
V
DD
I
V
OH1L
OH
(except for I/O ports 6,8 and P9-0)
V
DD
I
V
OL1
LCD
(except for I/O port 8 and P9-0)
V
DD
I
V
OL2
LCD
(P8-0 to P8-3)
V
DD
I
V
OL3
LCD
(P9-0)
V
IH
(except for I/O ports 6,8 and P9-0)
V
IH
I
LI
(P6-0 to P6-3)
V
IH
(P8-0 to P8-3, P9-0)
(except for I/O ports 6,8 and P9-0)
V
(P6-0 to P6-3)
IH
(P8-0 to P8-3, P9-0)
V
IL
When P3-0 to P3-3 are set to
R
IN1
pull-down or pull-up
R
(TEST) when
IN2
When SCK1/SCK2 are set to serial
f
SIO
clock input
to
,
to
COM4
S1
S18)
Test
Symbol
Circuit
V
LCD
I
OH4
V
OH
I
V
OL4
LCD
V
LCD
level
V
BS2
when the 1/3 bias type selected
V
LCD
level
V
BS3
the 1/2 bias selected
V
LCD
level
V
BS4
when the 1/3 bias selected
No load,
I
LCD2
when the 1/2 bias selected
(Note 5)
No load,
I
LCD3
when the 1/3 bias selected
125
(SCK1/2, RX1/2, SDIO1/2, TX1/2) (Note 4)
Test Condition
= 0.9 V, V
= 3.0 V,
LCD
= V
− 0.2 V
DD
= 0.9 V, V
= 3.0 V,
LCD
= V
− 0.2 V
DD
= 0.9 ~ 1.8 V,
= 3.0 V, V
= 0.2 V
OL
= 0.9 ~ 1.8 V,
= 3.0 V, V
= 0.2 V
OL
= 0.9 ~ 1.8 V,
= 3.0 V, V
= 0.2 V
OL
= V
= 0 V
V
DD,
IL
= V
= 0 V
, V
DB
IL
= 5.5 V, V
= 0 V
IL
= "L"
RESET
Test Condition
= 3.0 V,
= V
− 0.2 V
LCD
= 3.0 V, V
= 0.2 V
OL
= 3 V, no load,
= 3 V, V
= 1.5 V, no load, when
EE
= 3 V, no load,
TC9349AFG
Min
Typ.
Max
Unit
−0.4
−0.8
−0.5
mA
0.4
0.8
2
4
20
±1.0
µA
V
DD
~
V
× 0.8
LCD
V
DD
~
V
× 0.8
DB
V
V
DD
~
5.5
× 0.8
V
DD
0
~
× 0.2
25
50
100
kΩ
10
kΩ
200
kHz
Min
Typ.
Max
Unit
−0.2
mA
0.5
0.85
1.00
1.15
1.35
1.5
1.65
V
1.85
2.00
2.15
5
µA
100
2006-02-24

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