Toshiba TC9314F Manual page 64

Cmos digital integrated circuit silicon monolithic
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General-Purpose I/O Port
Characteristics
"H" level
Output current
"L" level
Input leakage current
"H" level
Input voltage
"L" level
INTR1, INTR2 Input Ports
Characteristics
Input leakage current
"H" level
Input voltage
"L" level
IN1, IN2, RESET Input Ports
Characteristics
Input leakage current
"H" level
Input voltage
"L" level
Others
Characteristics
Input pull-down resistance
X
amp feedback resistance
IN
X
output resistance
OUT
Input amp feedback resistance
Low-voltage detect voltage
(P5-0~P7-3)
Test
Symbol
Circuit
I
V
OH1
OH
I
V
OL1
OL
I
V
LI
IH
V
IH2
V
IL2
Test
Symbol
Circuit
I
V
LI
IH
V
IH3
V
IL3
Test
Symbol
Circuit
V
IH
I
LI
(excluding SC
V
IH2
V
IL2
Test
Symbol
Circuit
R
(TEST)
IN2
R
(X
fXT
IN
R
(X
OUT
OUT
R
(FM
fIN
V
(V
STP
DD
64
Test Condition
= 4.5 V
= 0.5 V
= 5.0 V, V
= 0 V
IL
Test Condition
= 5.0 V, V
= 0 V
IL
Test Condition
= 5.0 V, V
= 0 V
IL
input)
IN
Test Condition
-X
)
OUT
)
, AM
, IF
, IF
)
IN
IN
IN1
IN2
)
TC9314F
Min
Typ.
Max
Unit
−0.5
−1.0
mA
0.5
1.0
±1.0
µA
2.2
~
V
DD
V
0
~
0.8
Min
Typ.
Max
Unit
±1.0
µA
3.8
~
V
DD
V
0
~
1.2
Min
Typ.
Max
Unit
±1.0
µA
V
DD
~
V
× 0.7
DD
V
V
DD
0
~
× 0.3
Min
Typ.
Max
Unit
25
50
100
kΩ
20
MΩ
3
kΩ
250
500
1000
kΩ
1.3
1.5
1.7
V
2003-07-03

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