Lbu Write To Ertec 200 With Separate Read/Write Line (Lbu_Rdy_N Active Low); Figure 14: Lbu-Write-Sequence With Separate Rd/Wr Line; Table 26: Lbu Write Access Timing With Seperate Read/Write Line - Siemens ERTEC200 Manual

7.5.2

LBU Write to ERTEC 200 with separate Read/Write line (LBU_RDY_N active low)

LBU_CS_R_N/
LBU_CD_M_N
LBU_WR_N
LBU_A(20:0)/
LBU_SEG(1:0)
LBU_BE(1:0)_N
LBU_RDY_N
LBU_D(15:0)

Figure 14: LBU-Write-Sequence with separate RD/WR line

Parameter
t chip select asserted to write pulse asserted delay
CSWS
t address valid to write pulse asserted setup time
AWS
t write pulse asserted to ready enabled delay
WRE
t write pulse asserted to data valid delay
WDV
t ready active pulse width
RAP
t write pulse deasserted to chip select deasserted delay
WCSH
t address valid to write pulse deasserted hold time
WAH
t ready asserted to write pulse deasserted delay
RTW
t data valid/enabled to read pulse deasserted hold time
WDH
t write recovery time
WR

Table 26: LBU Write access timing with seperate Read/Write line

Copyright © Siemens AG 2007. All rights reserved.
Technical data subject to change
t
CSWS
t
AWS
t
WRE
t
WDV
Description
t
RTW
t
RAP
Min
0 ns
0 ns
5 ns
17 ns
0 ns
0 ns
0 ns
0 ns
25 ns
80
t
WCSH
t
WR
t
WAH
t
WDH
Max
12 ns
40 ns
23 ns
ERTEC 200 Manual
Version 1.1.0