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S3F84B8_UM_REV 1.00
(T
= 25C, V
= 1.8V to 5.5V)
A
DD
Parameter
Low voltage reset
V
DD
(T
= –40
C to + 85
C at V
A
Parameter
Flash Erase/Write/Read voltage
(1)
Programming time
(2)
Chip erasing time
(3)
Sector erasing time
Data access time
Number of writing/erasing
Data retention
NOTE:
1.
Programming time specifies the time during which one byte (8-bit) is programmed.
2.
Chip erasing time specifies the time during which the entire program memory is erased.
3.
Sector erasing time specifies the time during which the 128 byte block is erased.
4.
Chip erasing is available in Tool Program mode only.
Table 21-10
Symbol
V
LVR
Figure 21-5
Table 21-11
Flash Memory AC Electrical Characteristics
= 1.8V to 5.5V)
DD
Symbol
Fewrv
Ftp
Ftp1
Ftp2
FtRS
FNwe
Ftdr
LVR Circuit Characteristics
Conditions
Minimum
–
1.8
2.1
2.8
3.4
3.7
V
LVR,MIN
chip starts working when the voltage increases )
LVR Reset Timing
Conditions
Minimum
V
1.8
DD
20
32
4
V
= 2.0V
–
DD
–
10,000
–
10
21-11
21 ELECTRICAL DATA
Typical
Maximum
1.9
2.3
3.0
3.6
3.9
V
LVR,MAX
(Reset when the voltage decreases )
V
LVR
Typical
Maximum
5.0
–
–
–
250
–
–
Unit
2.0
V
2.5
3.2
3.8
4.1
Unit
5.5
V
30
uS
70
mS
12
mS
–
nS
–
Times
–
Years
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