Samsung S3F84B8 User Manual page 301

8-bit cmos
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S3F84B8_UM_REV 1.00
(T
= –40C to + 85C, V
A
Parameter
Symbol
Operating Voltage
Main crystal or
ceramic frequency
Input high voltage
Input low
voltage
Output high voltage
Output low voltage
Input high leakage
current
Input low leakage
current
Output high
leakage current
Output low leakage
current
Pull-up resistors
Supply current
Table 21-2
= 1.8V to 5.5V)
DD
V
Fmain = 0.4 – 2MHz
DD
Fmain = 0.4 – 4MHz
Fmain = 0.4 – 10MHz
f
V
= 2.7V to 5.0V
main
DD
V
= 1.8V to 2.7V
DD
V
Ports 0,1, 2, and
IH1
RESET
V
X
IH2
IN
V
Ports 0, 1, 2, and
IL1
RESET
V
X
IL2
IN
V
I
= –10mA
OH
OH
Ports 0,1, and 2
V
I
= 25mA
OL
OL
Ports 0, 1, and 2
I
All input pins (except
LIH1
P0.2 and I
)
LIH2
I
X
LIH2
IN
I
All input pins (except
LIL1
P0.2 and I
)
LIL2
I
X
LIL2
IN
I
All output pins
LOH
I
All output pins
LOL
R
V
= 0V,
P1
IN
Ports 0, 1, and 2
I
Run mode
DD1
(10MHz CPU clock)
I
Idle mode
DD2
(10MHz CPU clock)
I
Stop mode
DD3
DC Electrical Characteristics
Conditions
V
= 1.8 to
DD
5.5V
V
= 1.8 to
DD
5.5V
V
= 4.5 to
DD
5.5V
V
= 4.5 to
DD
5.5V
V
= V
IN
DD
V
= V
IN
DD
V
= 0V
IN
V
= 0V
IN
V
= V
OUT
DD
V
= 0V
OUT
V
= 5V
DD
T
= 25C
A
V
= 4.5 to
DD
5.5V
V
= 4.5 to
DD
5.5V
V
= 4.5 to
DD
5.5V (LVR
disabled)
T
= – 40C ~
A
85C
21-3
21 ELECTRICAL DATA
Minimum
Typical
1.8
2.0
2.7
0.4
0.4
0.8 VDD
VDD-0.1
VDD-1.5
VDD-0.4
0.4
25
50
3
2
0.6
Maximum
Unit
5.5
V
5.5
5.5
10
MHz
4
VDD
V
0.2 VDD
V
0.1
V
2.0
V
1
uA
20
–1
uA
–20
2
uA
–2
uA
100
k
6
mA
4
4.0
uA

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