Electrical Characteristics; Dc Characteristics; Table 5 Dc Characteristics - Epson RX4111CE Applications Manual

9. Electrical Characteristics

9.1. DC characteristics

9.1.1. DC characteristics

Table 5 DC characteristics


Item
Current
consumption 1
Current
consumption 2
Current
Consumption 3
Detection voltage of
V rise up
DD
Detection voltage of
V fall down
DD
High Input voltage
Low Input voltage
High Output voltage
Low Output voltage
Input leakage current
Output leakage current
V V
and
DD BAT
SW = OFF leak current
V and V
BAT DD
SW = ON
resistance
Input Resistance
RX4111CE
ETM62E-02
Unless otherwise specified, V
Symbol Condition
Ta=40C +105C 
CE = Low,
FOUT = OFF, /INT = OFF,
I
DD
V = V = 3.0 V
DD IO
INIEN = 0b
CE = Low
FOUT = 32.768 kHz, /INT = OFF
I V = V = 3.0 V
32k DD IO
FOUT pin CL = 15 pF
INIEN = 0b
CE = Low,
I
BAT
V = 3.0 V, V
BAT DD
+V Switch voltage of V
DET1
-V Switch voltage of V
DET1
V CE, CLK, DI
IH
V CE, CLK, DI
IL
V V = 5.0 V, I
OH1 IO
FOUT,
V V = 3.0 V, I
OH2 IO
DO
V
V = 3.0 V, I
OH3
IO
V V = 5.0 V, I
OL1 IO
FOUT,
V V = 3.0 V, I
OL2 IO
DO
V
V = 3.0 V, I
OL3
IO
V V = 5 V, I
OL4 IO
/INT
V V = 3 V, I
OL5 IO
Exclude CE
I
LK
=V
V
IN
I
CE, V
LKPD
FOUT, DO,
I
OZ
Output voltage = V
I V = 3.0 V、V
SW BAT
V and V SW = ON
DD BAT
ΔV=＋0.1 V, V
=5.5 V , V
BAT
I
SWON1
ΔV=＋0.1 V, V
=3.0 V , V
BAT
= 125 Ω～750 Ω
R
SWON1
CEpin
R
DWN =V 
V
IN IO
Seiko Epson Corporation
= V = V
DD
BAT IO
Min.
= V = 0.0 V
IO
from V 1.25
DD BAT
from V 1.20
BAT DD
0.8  V
GND  0.3
= -1 mA 4.5
OH
= -1 mA 2.2
OH

2.9
=-100 A
OH
=1 mA GND
OL
= 1 mA GND
OL

GND
=100 A
OL
= 1 mA GND
OL
= 1 mA GND
OL
0.1
or GND
IO
= GND 0.1
IN
0.1
or GND
IO
= 0.0 V
DD
=5.4 V
DD
133
=2.9 V
DD
=5 V
75
V
IO
=3 V
V 150
IO

9. Electrical Characteristics

= 1.6 V  5.5 V, Ta = -40 C to +85 C
Typ. Max.
100 450
2.0 3.0
110 450
1.35 1.45
1.30 1.40
5.5
IO
0.2  V
IO
5.0
3.0
3.0
GND+0.5
GND+0.8
GND+0.1
GND+0.25
GND+0.4
0.1
0.1
0.1
50
- 800
150 300
300 600
Jump to

,
Unit
nA

A
nA
V
V
V
V
V
V
V
A
A
nA
A
kΩ
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