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CDP-101
Handling Precautions for MOS
ICs
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Generally, the insulation resistance of the oxide
layer in MOS IC structures is very high, and the oxide
layer is very thin.
Because of this, it is possible that
the static voltages usually present on clothes and the
human
body
will be enough
to generate a potential
difference across the insulator, high enough to cause
a breakdown of the insulating layer.
The following precautions should be taken while
handling these ICs.
(Particular care should be taken under conditions
of low humidity.)
Precautions in Replacing MOS
!Cs
1.
Store new ICs by inserting them into a urethane-
polyester
cushion
(which is somewhat
conduc-
3.
Equalize
any potential difference
between the
clothes, the tools in use, the work bench, the
set being worked
on, and the packaged IC by
touching them all in succession with the hands
or a conductive wire or tool.
4.
The following are effective methods for handl-
ing ICs
that remove
the potential
difference
across the oxide layer.
® Use a paper clip modified
by soldering in a
wire braid insert.
wire braid
clip
A
tive), or wrapping it in aluminum
foil, so that
=
'
all the pins are at the same. potential.
soldered
=
'
soldered
—— 3
(The ICs should be stored in that manner until
Y SSS
4
mounted
on the circuit board.)
Fig. A
partially conductive
unrethane-polyester
cushion
IC
Fig. B
aluminum
foil
2.
Check the soldering iron for possible power-line
leakage
current.
Make
sure
that
there
is no
5
Make sure that there is
Fig. D
no solder on the inside.
clip
partially conductive
leakage path by connecting an ohmmeter to the
Fi
urethane-polyester
tip of the soldering iron and the plug as shown
9. E
eee
pe aluminen
in Fig. C.
If there is a leakage path, use some
other soldering iron.
VOM
(2 x 10,000 range)
wire braid
y
NOOO
EEK
VE
KY EEE
KS
mt
clip
(AEE
EEE
EE OE XAT
JSD
Make sure that all the pins are in
contact with the wire braid (all
:
the pins will then be at the same
Fig. F _ potential.).
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