Reference Designations And Abbreviations - HP 5334B Service Manual

Table 6-1. Reference Designations and Abbreviations
HP
5334B -
Service Manual
6-2
REFERENCE DESIGNATIONS
A
=
assembly DL = delay line K
=
relay
AT = anenustor; isolator;
T
=
transformer
DS = annunciator: signaling device L = coil; inductor
termination
TB = terminal board
(audible or visual); lamp; LED M = metre
B
=
fen; motor
TC = thermocouple
E
=
miscellaneouselectrical part MP =
miscellaneous
mechanical part TP = test point
BT = battery F =fuse P = electrical connector (movable
C
=
capacitor
U = integrated circuit; microcircuit
FL
=
filter portion); plug
CP =coupler H =hardware
V = electron tube
=
transistor; SCR; triode thyristor
VR =
voltage regulator; breakdown diode
CR
=
diode; diode thyristor; W = circulator R
=
resistor
varactor
W
=
cable; transmission path; wire
J
=
electrical connector latetionary RT
=
thermistor
DC
=
directional coupler
X
=
socket
portionl; jack S =switch Y = crystal unit-piezo-electric
Z = tuned cavity; tunad circuit
ABBREVIATIONS
A = ampere HD =head NE =neon
= alternating current
SPST
=
singlepole, singlethrow
ac HDW =hardware NEG =negative SSB
=
single sideband
ACCESS
=
accessory HF
=
high frequency nF = nanofared SST
=
stainless steel
ADJ = adjustment HG = mercury NI PL = nickel plate
AID = analog-to-digital
STL =steel
HI
=
high NIO = normally open SQ =square
AF = audio frequency HP
=
Hewlett-Packard NOM =nominal SWR = standing-wave ratio
AFC =automatic frequency control HPF
=
high pass filter NORM = normal SYNC = synchronize
AGC
=
automatic gain control HR
=
hour (used in parts list1 NPN
=
negative-positive-negative T =timed (slow-blow fuse)
AL = aluminum HV = high voltage NPO = negativepositive zero (zero TA = tantalum
ALC = automatic level control Hz = h e m tempereture coelficiant) TC = temperature compenseting
AM
=
amplitude modulation = integrated circuit NRFR = not recommended for field TD
=
time delay
AMPL = amplifier IC ID = inside diameter
replacement TERM =terminal
APC =automaticphasecontrol IF = intermediate frequency ns = nanmecond
TFT = thin-film transistor
ASSY =assembly IMPG = impregnated NSR = not separately replaceable TGL =toggle
AUX
=
auxiliary in = inch nW
=
nanowan THD =thread
AVG =average INCD = incandescent OBD
=
order by description THRU =through
AWG = amarican wire gauge INCL = include(s1 OD =outside diameter TI = titanium
BAL = balance INP = input OH =oval head TOL =tolerance
BCD =
binary coded decimal INS
=
insulation OP AMPL = operational ampl~fier TRIM = trimmer
BD =board INT = internal OPT = option TSTR
=
transistor
BE CU
=
beryllium copper kg = kilogram OSC
=
oscillator TTL = transistor-transistor logic
BFO = beat frequency oscillator kHz = kilohem OX = oxide
N
= television
BH =binder head k f l
=
kilohm
0 1
= ounce
N I
=
television interference
BKDN =breakdown kV = kilovolt fl = ohm
TWT
=
traveling wave tube
BP
=
bandpass Ib
=
pound
P =peak (used in parts list) U = micro (104) used in parts list)
BPF = bandpass filter LC = inductance-capacitance
PAM = pulse-amplitude modulation UF
=
microfarad (used in parts list)
BRS = brass
LED = light-emitting diode
PC = printed circuit UHF = ultrahigh frequency
BWO
=
backward-wave oscillator LF = low frequency
PCM = pulsecode modulation; UNREG
=
unregulated
CAL =calibrate LG = long
pulse%ount modulation V = volt
ccw = counterclockwise LH
=
left hand
PDM = pulseduration modulation V A =
voltampere
CER =ceramic LIM = limit PF = picofarad
Vac
=
volts ac
CHAN =channel LIN
=
linear Illper (used in parts listl PH BRZ
=
phosphor bronze
VAR = variable
cm = centimeter lin = linear PHL = phill~ps VCO = voltage-controlled oscillator
CMO = coaxial LK WASH = lockwasher PIN = positive-intrinsic-negs(ive Vdc = volts dc
COEF = coefficient LO = low; local oscillator PIV = peak inverse voltage VDCW = volts, dc, working (used in
COM =common LOG = logarithmic taper (used Pk = peak parts list)
COMP = composition
i n parts list) PL = p h 8 ~ lock V(F)
=
volts, filtered
COMPL = complete log = logarithm(ic1 PLO = phase lock oscillator VFO = variablefrequency oscillator
CONN = connector LPF = low pass filter PM = phase modulation VHF = very-high frequency
CP = cadmium plate LV = low voltage PNP = positivenegativ4positive Vpk = volts peak
CRT = cathode-ray tube m = metre (distance) P I 0 =part of
CTL = complementary transistor logic mA = milliampere
Vp-p = volts peak-to-peak
POLY
=
polystyrene Vrms
=
volts rms
CW = continuous wave MAX = maximum PORC = porcelain VSWR
=
voltage standing wave ratio
cw = clockwise Mfl = megohm POS = positive; position(s1 (used i n VTO =vol(sgetunedoscillator
DIA
=
digital-toanalog MEG = meg ( t W ) (used in parts llstl par*, list1 VTVM
=
vacuum-tube voltmeter
dB = decibel MET FLM = metal film W S N = posilion V(X1 = volt?). switched
dBm =decibel referred to 1 mW MET OX = metal oxide POT = potenttometer W
=
wan
dc =direct current MF
=
medium frequency; microfarad p-p = peak-to-peak Wl =with
deg = degree (temperature (used in parts list) PP = peak-to-peak (used in parts llstl WIV =working inversevoltage
interval or difference) MFR = manufacturer PPM = pulse-position modulation WW
=
wirewound
...
O
=
degree (plane angle) mg = milligram PREAMPL = preamplifier WIO =without
OC = degreeCelsius (centripradei MHz = megahem PRF = pulse-repetition frequency YIG = yttrium-iron-garnet
O F
=
degree Fahrenheit mH
=
millihenry PRR = pulse repetition rate Zo
=
characteristic impedance
'K
=degree Kelvin mho = conductance ps
=
picosecond
DEPC = deposited carbon MIN =minimum PT = point
DET =detector mip = minute (time1 PTM = pulse-time modulation
diam =diameter
...
=
minute (plane angle) PWM
=
pulse-width modulation
DIA = diameter (used in parts list1 MlNAT = miniature PWV = peak working voltage
DlFFAMPL= differential amplifier mm
=
millimetre RC = resistance capacitance
div = division MOD = modulator RECT = rectifier
DPDT = doublepole, doublethrow MOM = momentary REF = reference
NOTE
DR = drive
MOS
=
metal-oxide semiconductor REG = regulated All abbreviations i n the parts list will
DSB
=
double sideband
ms = millisecond REPL = replaceable be in upper case.
DTL = diode transistor logic MTG = mounting RF = radio frequency
DVM
=
digital voltmeter MTR
=
meter (indicating device) RFI = radio frequency interference
ECL
=
emitter coupled logic mV = millivolt RH
=
round head; right hand
EMF =electromotive forca mVac = millivolt, ac RLC = resistanceinductanc~pacitance
EDP =electronic data processing mVdc = millivolt, dc RMO = rack mount only
ELECT = electrolflic mVpk = millivolt, peak rms = root-mean-sguare
ENCAP
=
encapsulated m V p p = millivolt, peak-to-peak RND =round
EXT = external mVrms = millivolt, r m ROM = read-only memory
F = farad mW = milliwen RLP = rack and panel
MULTIPLIERS
FET = field-effect transistor MUX = multiplex RWV = reverse worlcing volbge
FIF
=
flip-flop MY = mylar S
=
scanering parameter
* ~ ~ I V V W W I PWI X
Yunlp*
FH = flat head pA = microampere
19
= second (time)
T tera 1012
FOL H
=
fillister head pF
=
microfarad
...
= second (plane angle)
G giga t0o
FM = frequency modulation p H = microhenry S-B = slow-blow fuse (used in parts list) M mega
1Os
FP = front panel pmho = micromho SCR = silicon controlled rectifier; screw
k kilo
103
FREQ
=
frequency W s = microsecond SE = selenium de deka 10
FXD
=
fixed pV
=
microvolt SECT =sections d deci 10-1
B = gram pVac = microvolt.
(K
SEMICON
=
semiconductor
c
centi 10-2
GE
=
germanium pVdc = microvolt, dc SHF = superhigh frequency m milli 10-3
GHz = gigahem = microvolt, peak SI = silicon
p micro 10-8
GL =glass p =microvott, peek-topeak SIL = silver n nano 10-0
GND = ground(ed1 pVrms = microvolt, nns SL = slide P pico 10-12
H = henry pW = microwatt SNR = signal-to-noise ratio f k m t o 10-15
h =hour n A = nanoampere SPDT = singlepole, double-throw
a an0 10-18
HET =heterodyne NC
=
no connection SPG = spring
HEX =hexagonal NIC = normally closed SR = split ring
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