Toshiba GRE110 Instruction Manual page 122

O f f / O n
E F 3 - 2 F
N A / B l o c k
E F 4 E N
O f F / O n
E F 4 - 2 F
N A / B l o c k
<EF1EN>, <EF2EN>
• Enter 1(=On) to enable the EF1 or EF2 and press the ENTER key. If disabling the EF1 or
EF2, enter 0(=Off) and press the ENTER key.
<MEF1C>, <MEF2C>
To set the Inverse Curve Type, do the following.
• If [MEF1C] or [MEF2C] is 1(=IEC), enter 0(=NI) or 1(=VI) or 2(=EI) or 3(=LTI) and press
the ENTER key.
• If [MEF1C] or [MEF2C] is 2(=IEEE), enter 0(=MI) or 1(=VI) or 2(=EI) and press the
ENTER key.
• If [MEF1C] or [MEF2C] is 3(=US), enter 0(=CO2) or 1(=CO8) and press the ENTER key.
<EF1R>, <EF2R>
To set the Reset Characteristic, do the following.
• If [MEF1C] or [MEF2C] is 2(=IEEE), 3(=US) or 4(=C), enter 0(=DEF) or 1(=DEP) and press
the ENTER key.
<EF3EN, EF4EN>
• Enter 1(=On) to enable the EF3 and press the ENTER key. If disabling the EF3, enter 0(=Off)
and press the ENTER key. The EF4 is the same.
<EF1-2F, EF2-2F, EF3-2F, EF4-2F>
• Enter 1(=Block) to block the EF1, EF2, EF3 and EF4 against the inrush current, and press the
ENTER key.
• After setting, press the END key to display the following confirmation screen.
C h a n g e
E N D = Y
• Press the ENTER (=Y) key to change settings and return to the "Scheme sw" screen.
0
1
0
s e t t i n g s
C A N C E L = N
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