Panasonic Transistors 2SC5846 Specifications

Transistors
2SC5846
Silicon NPN epitaxial planar type
For general amplification
■ Features
High forward current transfer ratio h
SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
25 C
a
Symbol Rating
V 60
CBO
V 50
CEO
V 7
EBO
I 100
C
I 200
CP
P 100
C
T 125
j
T 55 to 125
stg
25 C 3 C
a
Symbol
V I
CBO C
V I
CEO C
V I 10
EBO E
I V
CBO CB
I V
CEO CE
h V
FE CE
V I
CE(sat) C
C V
ob CB
f V
T CB
SJC00298AED
0.23
Unit
V
V
V
mA
mA
mW
Marking Symbol: 7K
C
C
Conditions
10 , I 0
E
2 mA, I 0
B
, I 0
C
20 V, I 0
E
10 V, I 0
B
10 V, I 2 mA
C
100 mA, I 10 mA
B
10 V, I 0, f 1 MHz
E
10 V, I 2 mA, f = 200 MHz
E
SSSMini3-F1 Package
+0.05
0.33 0.10
–0.02
3
1 2
+0.05
–0.02
(0.40) (0.40)
0.80 ±0.05
1.20 ±0.05
5˚
SSSMini3-F1 Package
Min Typ Max
60
50
7
0.1
100
180 390
0.1 0.3
2.2
100
Unit: mm
+0.05
–0.02
1: Base
2: Emitter
3: Collector
Unit
V
V
V
A
A
V
pF
MHz
1