Panasonic Transistors 2SC3931 Specification Sheet

Transistors
2SC3931
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
Common-emitter reverse transfer
capacitance
Power gain
Noise figure
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
V 30
CBO
V 20
CEO
V 3
EBO
I 15
C
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 µA, I
V I
CBO C
= 10 µA, I
V I
EBO E
V V
BE CB
*
h V
FE CB
f V
T CB
C V
re CB
G V
P CB
NF V
CB
C D
65 to 160 100 to 260
Unit
V
V
V
mA
mW
Marking Symbol: U
°C
°C
Conditions
= 0
E
= 0
C
= 6 V, I = −1 mA
E
= 6 V, I = −1 mA
E
= 6 V, I = −1 mA, f = 200 MHz
E
= 6 V, I = −1 mA, f = 10.7 MHz
E
= 6 V, I = −1 mA, f = 100 MHz
E
= 6 V, I = −1 mA, f = 100 MHz
E
SJC00142BED
+0.1
0.3
–0.0
3
1 2
(0.65) (0.65)
1.3 ±0.1
2.0 ±0.2
10˚
SMini3-G1 Package
Min Typ Max
30
3
720
65 260
450 650
0.8 1.0
24
3.3
Unit: mm
+0.10
0.15
–0.05
1: Base
2: Emitter
3:Collector
EIAJ: SC-70
Unit
V
V
mV

MHz
pF
dB
dB
1