Panasonic Transistors 2SC2480 Specifications

Transistors
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency f
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
*
Transition frequency
Reverse transfer capacitance
(Common base)
Reverse transfer capacitance
(Common emitter)
Power gain
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
f
T
Marking symbol
Product of no-rank is not classified and have no indication for rank.
Publication date: June 2006
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
V 30
CBO
V 20
CEO
V
EBO
I 50
C
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
EBO E
V V
BE CB
h V
FE CB
f V
T CB
C V
rb CE
C V
re CB
G V
P CB
T S
800 to 1 400 1 000 to 1 600
RT RS
Unit
V
V
3 V
mA
mW
Marking Symbol: R
°C
°C
Conditions
= 100 µA, I = 0
E
= 10 µA, I = 0
C
= 10 V, I = −2 mA
E
= 10 V, I = −2 mA
E
= 10 V, I = −15 mA, f = 200 MHz
E
= 6 V, I = 0, f = 1 MHz
C
= 10 V, I = −1 mA, f = 10.7 MHz
E
= 10 V, I = −1 mA, f = 200 MHz
E
No-rank
800 to 1 600
R
SJC00116CED
+0.10
0.40
–0.05
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
Min Typ
30
3
720
25
800 1 300
0.8
1.0
20
Unit: mm
+0.10
0.16
–0.06
1: Base
2: Emitter
3: Collector
JEITA: SC-59A
Max Unit
V
V
mV

250
1 600 MHz
pF
1.5 pF
dB
1