Transistors
2SC3938G
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: April 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol
Rating
V
40
CBO
V
40
CES
V
EBO
I
100
C
I
300
CP
P
150
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I
V
CBO
CB
I
V
EBO
EB
*
h
V
FE
CE
V
I
CE(sat)
C
V
I
BE(sat)
C
f
V
T
CB
C
V
ob
CB
t
Refer to the measurement circuit
on
t
off
t
stg
Q
R
60 to 120
90 to 200
Unit
V
V
5
V
mA
mA
mW
°C
°C
Conditions
= 40 V, I
= 0
E
= 4 V, I
= 0
C
= 1 V, I
= 10 mA
C
= 10 mA, I
= 1 mA
B
= 10 mA, I
= 1 mA
B
= 10 V, I
= −10 mA, f = 200 MHz
E
= 10 V, I
= 0, f = 1 MHz
E
SJC00364AED
■ Package
• Code
SMini3-F2
• Marking Symbol: 2Y
• Pin Name
1. Base
2. Emitter
3. Collector
Min
Typ
Max
0.1
0.1
60
200
0.17
0.25
1
450
2
6
17
17
10
Unit
µA
µA
V
V
MHz
pF
ns
ns
ns
1