Flash Memory Programming/Erasing; Program/Program-Verify - Hitachi H8S/2628 Hardware Manual

H8s/2628 series 16-bit single-chip microcomputer
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19.8

Flash Memory Programming/Erasing

The flash memory is programmed or erased in on-board programming mode by a software method
using the CPU. Depending on the FLMCR1 setting, the flash memory operates in one of the
following four modes: Program mode, program-verify mode, erase mode, and erase-verify mode.
The programming control program in boot mode and the user program/erase control program in
user program mode perform programming/erasing in combination with these modes. Flash
memory programming and erasing should be performed in accordance with the descriptions in
section 19.8.1, Program/Program-Verify and section 19.8.2, Erase/Erase-Verify, respectively.
19.8.1

Program/Program-Verify

When writing data or programs to the flash memory, the program/program-verify flowchart shown
in figure 19.9 should be followed. Performing programming operations according to this flowchart
will enable data or programs to be written to the flash memory without subjecting the chip to
voltage stress or sacrificing program data reliability.
1. Programming must be done on erased addresses. Do not perform additional programming or
previously programmed addresses.
2. Programming should be performed in units of 128 bytes. A 128-byte data must be transferred
even if data to be written is fewer than 128 bytes. In this case, H'FF data must be written to the
extra addresses.
3. Prepare the following data storage areas in RAM: A 128-byte programming data area, a 128-
byte reprogramming data area, and a 128-byte additional-programming data area. Perform
reprogramming data computation and additional programming data computation according to
Figure 19.9.
4. Consecutively transfer 128 bytes of data in byte units from the reprogramming data area or
additional-programming data area to the flash memory. The program address and 128-byte
data are latched in the flash memory. The lower 8 bits of the start address in the flash memory
destination area must be H'00 or H'80.
5. The time during which the P1 bit is set to 1 is the programming time. Figure 19.9 shows the
allowable programming times.
6. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
Set the overflow cycle to approximately 6.6 ms.
7.
For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower 2
bits are B'00. Verify data can be read in longwords from the address to which a dummy write
was performed.
8.
The number of repetitions of the program/program-verify sequence for the same bit should be
less than 1,000.
Rev. 1.0, 09/02, page 461 of 568

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