Panasonic 2SA1806J Specification Sheet

Transistors
2SA1806J
Silicon PNP epitaxial planar type
For high speed switching
■ Features
• High speed switching
• Low collector-emitter saturation voltage V
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Ranking is not given for any product.
Publication date: August 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
−15
V
CBO
−15
V
CEO
−4
V
EBO
−50
I
C
−100
I
CP
P 125
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
I V
EBO CE
*
h V
FE1 CE
h V
FE2 CE
= −10 mA, I
V I
CE(sat) C
f V
T CB
C V
ob CB
t
Refer to the switching time
on
t measurement circuit
off
t
stg
Q R
50 to 120 90 to 150
SJC00300AED
0.27
Unit
V
V
V
mA
mA
mW
Marking Symbol: AK
°C
°C
Conditions
= −8 V, I = 0
E
= −3 V, I = 0
C
= −1 V, I = −10 mA
C
= −1 V, I = −1 mA
C
= −1 mA
B
= −10 V, I = 10 mA, f = 200 MHz
E
= −5 V, I
= 0, f = 1 MHz
E
+0.05
1.60
–0.03
+0.03
0.12
–0.01
1.00 ±0.05
3
1 2
±0.02
(0.50)(0.50)
5˚
EIAJ: SC-89
SSMini3-F1 Package
Min Typ Max
− 0.1
− 0.1
50 150
30
− 0.1 − 0.2
800 1 500
1
12
20
19
Unit: mm
1: Base
2: Emitter
3: Collector
Unit
µA
µA

V
MHz
pF
ns
ns
ns
1