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Panasonic 2SA0720A Specification Sheet
Panasonic 2SA0720A Specification Sheet

Panasonic 2SA0720A Specification Sheet

Transistors

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Transistors
2SA0720A
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1318A
■ Features
• High collector-emitter voltage (Base open) V
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurment
* 2: Rank classification
Rank
h
FE1
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
(2SA720A)
CEO
= 25°C
a
Symbol
Rating
−80
V
CBO
−70
V
CEO
−5
V
EBO
− 0.5
I
C
−1
I
CP
P
625
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= −10 µA, I
V
I
CBO
C
= −2 mA, I
V
I
CEO
C
= −10 µA, I
V
I
EBO
E
I
V
CBO
CB
* 1
* 2
h
V
FE1
CE
h
V
FE2
CE
* 1
= −300 mA, I
V
I
CE(sat)
C
* 1
= −300 mA, I
V
I
BE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
85 to 170
120 to 240
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
V
A
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= −20 V, I
= 0
E
= −10 V, I
= −150 mA
C
= −10 V, I
= −500 mA
C
= −30 mA
B
= −30 mA
B
= −10 V, I
= 50 mA, f = 200 MHz
E
= −10 V, I
= 0, f = 1 MHz
E
SJC00003BED
5.0
±0.2
0.7
±0.1
+0.15
0.45
0.45
–0.1
+0.6
+0.6
2.5
2.5
–0.2
–0.2
1
2 3
TO-92-B1 Package
Min
Typ
Max
−80
−70
−5
− 0.1
85
240
40
− 0.2
− 0.6
− 0.85
−1.50
120
20
30
Unit: mm
4.0
±0.2
+0.15
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
Unit
V
V
V
µA
V
V
MHz
pF
1

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Summary of Contents for Panasonic 2SA0720A

  • Page 1 Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A ■ Features • High collector-emitter voltage (Base open) V • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier ■...
  • Page 2 2SA0720A  T ( °C ) Ambient temperature T  I CE(sat) −10 = 10 −1 = 75°C 25°C − 0.1 −25°C − 0.01 − 0.001 −1 −10 −100 −1 000 ( mA ) Collector current I  I = −10 V = 25°C...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.