Panasonic 2SA1739G Specification Sheet

Transistors
2SA1739G
Silicon PNP epitaxial planar type
For high speed switching
Complementary to 2SC3938G
■ Features
• High speed switching
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: April 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
−15
V
CBO
−15
V
CEO
−4
V
EBO
−50
I
C
−100
I
CP
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
I V
EBO CE
*
h V
FE1 CE
h V
FE2 CE
V I
CE(sat) C
f V
T CB
C V
ob CB
t
Refer to the switching time
on
t measurement circuit
off
t
stg
Q R
50 to 120 90 to 150
AXQ AXR
Unit
V
V
V
mA
mA
mW
°C
°C
Conditions
= −8 V, I = 0
E
= −3 V, I = 0
C
= −1 V, I = −10 mA
C
= −1 V, I = −1 mA
C
= −10 mA, I = −1 mA
B
= −10 V, I = 10 mA, f = 200 MHz
E
= −5 V, I
= 0, f = 1 MHz
E
No-rank
50 to 150
AX
SJC00347AED
■ Package
• Code
SMini3-F2
• Marking Symbol: AX
• Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
− 0.1
− 0.1
50 150
30
− 0.1 − 0.2
800 1 500
1
12
20
19
Unit
µA
µA

V
MHz
pF
ns
ns
ns
1