Panasonic 2SA1022 Specification Sheet

Transistors
2SA1022
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC2295
■ Features
• High frequency voltage f
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
(Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: February 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
−30
V
CBO
−20
V
CEO
−5
V
EBO
−30
I
C
P 200
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V V
BE CE
I V
CBO CB
I V
CEO CE
I V
EBO EB
*
h V
FE CE
= −10 mA, I
V I
CE(sat) C
f V
T CB
NF V
CB
Z V
rb CB
C V
re CE
B C
70 to 140 110 to 220
10˚
Unit
V
V
V
mA
Marking Symbol: E
mW
°C
°C
Conditions
= −10 V, I = −1 mA
C
= −10 V, I = 0
E
= −20 V, I = 0
B
= −5 V, I = 0
C
= −10 V, I = −1 mA
C
= −1 mA
B
= −10 V, I = 1 mA, f = 200 MHz
E
= −10 V, I = 1 mA, f = 5 MHz
E
= −10 V, I = 1 mA, f = 2 MHz
E
= −10 V, I = −1 mA, f = 10.7 MHz
C
SJC00009BED
+0.10
0.40
–0.05
0.16
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
EIAJ: SC-59
Mini3-G1 Package
Min Typ Max
− 0.7
− 0.1
−100
−10
70 220
− 0.1
150 300
2.8
22
1.2
Unit: mm
+0.10
–0.06
1: Base
2: Emitter
3: Collector
Unit
V
µA
µA
µA

V
MHz
dB
Ω
pF
1