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N-ch
Electrical Characteristics
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge 1
Gate−drain ("miller") charge
Source−Drain Ratings and Characteristics
Characteristics
Drain reverse
Pulse (Note 1)
current
Forward voltage (diode)
(Ta = 25°C)
Symbol
Test Condition
I
V
= ±16 V, V
GSS
GS
DS
I
V
= 30 V, V
= 0 V
DSS
DS
GS
V
I
= 10 mA, V
= 0 V
(BR) DSS
D
GS
V
V
= 10 V, I
= 1 mA
th
DS
D
R
V
= 4 V, I
= 2.5 A
DS (ON)
GS
D
R
V
= 10 V, I
= 2.5 A
DS (ON)
GS
D
|Y
|
V
= 10 V, I
= 2.5 A
fs
DS
D
C
iss
V
= 10 V, V
= 0 V, f = 1 MHz
C
rss
DS
GS
C
oss
t
r
t
on
t
f
t
off
Q
g
V
≈ 24 V, V
= 10 V, I
DD
GS
Q
gs1
Q
gd
(Ta = 25°C)
Symbol
Test Condition
I
DRP
V
I
= 6 A, V
= 0 V
DSF
DR
GS
4
Min.
= 0 V
—
―
30
0.8
―
―
3
―
―
―
―
―
―
―
―
= 5 A
D
―
―
Min.
—
—
—
TPC8402
Typ.
Max.
Unit
—
±10
µA
―
10
µA
―
―
V
―
2.0
V
58
80
mΩ
37
50
mΩ
6
―
S
475
―
pF
85
―
270
―
10
―
16
―
ns
13
―
70
―
16
―
nC
11
―
5
―
Typ.
Max.
Unit
—
20
A
—
−1.2
V
2006-11-13
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