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Toshiba TPC8402 Handbook page 10

Field effect transistor silicon n, p channel mos type (n-mosvi/u-mosii)

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N-ch
1000
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
500
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)
300
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b)
(3) SINGLE-DEVICE OPERATION (NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)
100
50
30
10
5
3
1
0.5
0.3
0.1
0.001
− t
r
th
w
0.01
0.1
1
PULSE WIDTH t
10
(4)
(3)
(2)
(1)
SINGLE PULSE
10
100
(s)
w
TPC8402
1000
2006-11-13

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