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P-ch
Electrical Characteristics
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge 1
Gate−drain ("miller") charge
Source−Drain Ratings and Characteristics
Characteristics
Drain reverse
Pulse (Note 1)
current
Forward voltage (diode)
(Ta = 25°C)
Symbol
Test Condition
I
V
= ±16 V, V
GSS
GS
DS
I
V
= −30 V, V
DSS
DS
GS
V
I
= −10 mA, V
(BR) DSS
D
GS
V
I
= −10 mA, V
(BR) DSX
D
GS
V
V
= −10 V, I
= −1 mA
th
DS
D
R
V
= −4 V, I
= −2.2 A
DS (ON)
GS
D
R
V
= −10 V, I
= −2.2 A
DS (ON)
GS
D
|Y
|
V
= −10 V, I
= −2.2 A
fs
DS
D
C
iss
C
V
= −10 V, V
rss
DS
GS
C
oss
t
r
t
on
t
f
t
off
Q
g
V
≈ −24 V, V
DD
GS
Q
gs1
Q
gd
(Ta = 25°C)
Symbol
Test Condition
I
DRP
V
I
= −4.5 A, V
DSF
DR
GS
3
Min.
= 0 V
—
= 0 V
—
= 0 V
−30
= 20 V
−15
−0.8
—
—
3.5
—
= 0 V, f = 1 MHz
—
—
—
—
—
—
—
= −10 V, I
= −4.5 A
D
—
—
Min.
—
—
= 0 V
—
TPC8402
Typ.
Max.
Unit
—
±10
µA
—
−10
µA
—
—
V
—
—
—
−2.0
V
55
65
mΩ
27
35
7
—
S
970
—
180
—
pF
370
—
17
—
20
—
ns
75
—
160
—
28
—
nC
6
—
12
—
Typ.
Max.
Unit
—
−18
A
—
1.2
V
2006-11-13
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