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Thermal Characteristics - Toshiba TPC8402 Handbook

Field effect transistor silicon n, p channel mos type (n-mosvi/u-mosii)

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Thermal Characteristics

Characteristics
Thermal resistance, channel to ambient
(t = 10s)
Thermal resistance, channel to ambient
(t = 10s)
Marking
T P C 8 4 0 2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
(a)
Note 3:
a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is applied to both devices evenly.)
Note 4:
a) V
= −24 V, T
= 25°C (Initial), L = 1.0 mH, R
DD
ch
b) V
= 24 V, T
= 25°C (Initial), L = 1.0 mH, R
DD
ch
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: • on lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(from "01" for first week of the year, continuing up to "52" or "53")
Year of manufacture
(the last digit of the calendar year)
Single-device operation
(Note 3a)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
G
G
Symbol
Max.
R
83.3
th (ch-a) (1)
R
125
th (ch-a) (2)
R
167
th (ch-a) (1)
R
278
th (ch-a) (2)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(b)
= 25 Ω, I
= −4.5 A
AR
= 25 Ω, I
= 5.0 A
AR
2
TPC8402
Unit
°C/W
2006-11-13

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