Panasonic 2SC5829 Specification Sheet

Transistors
2SC5829
Silicon NPN epitaxial planar type
For high speed switching
■ Features
• Allowing the small current and low voltage operation
• High transition frequency f
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
V 10
CBO
V 7
CEO
V 2
EBO
I 10
C
P 50
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
= 1.5 V, I
I V
EBO EB
= 1 V, I
h V
FE CE
= 1 V, I
f V
T CE
C V
ob CB
S  = 1 V, I
2
V
21e CE
= 1 V, I
G V
UM CE
= 1 V, I
NF V
CE
SJC00287AED
3
Unit
V
V
V
mA
mW
Marking Symbol: X
°C
°C
Conditions
= 10 V, I = 0
E
= 0
C
= 1 mA
C
= 1 mA, f = 0.8 GHz
C
= 1 V, I = 0, f = 1 MHz
E
= 1 mA, f = 0.8 GHz
C
= 1 mA, f = 0.8 GHz
C
= 1 mA, f = 0.8 GHz
C
2
1
+0.01
0.39
1.00
−0.03
±0.05
0.25 0.25
±0.05
3
0.65
±0.01
ML3-N2 Package
Min Typ Max
1
1
100 200
4
0.4
6
15
3.5
Unit: mm
±0.05
1
2
0.05
±0.03
1: Base
2: Emitter
3: Collector
Unit
µA
µA

GHz
pF
dB
dB
dB
1