Panasonic 2SC5295J Specification Sheet

Transistors
2SC5295J
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■ Features
• High transition frequency f
• Low collector output capacitance (Common base, input open cir-
cuited) C
ob
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Foward transfer gain
Maximum unilateral power gain
Noise figure
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: December 2002
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
V 15
CBO
V 10
CEO
V 2
EBO
I 65
C
P 125
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
I V
EBO EB
*
h V
FE CE
f V
T CE
C V
ob CB
S 
2
V
21e CE
G V
UM CE
NF V
CE
Q R
50 to 120 100 to 170
Unit
V
V
V
mA
mW
Marking Symbol: 3S
°C
°C
Conditions
= 10 V, I = 0
E
= 1 V, I = 0
C
= 8 V, I = 20 mA
C
= 8 V, I = 15 mA, f = 1.5 GHz
C
= 10 V, I = 0, f = 1 MHz
E
= 8 V, I = 15 mA, f = 1.5 GHz
C
= 8 V, I = 15 mA, f = 1.5 GHz
C
= 8 V, I = 7 mA, f = 1.5 GHz
C
SJC00283BED
+0.05
1.60
–0.03
0.12
1.00 ±0.05
3
1 2
0.27 ±0.02
(0.50)(0.50)
5˚
SSMini3-F1 Package
Min Typ Max
50 170
7.0 8.5
0.6 1.0
7 9
10
2.2 3.0
Unit: mm
+0.03
–0.01
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
Unit
µA
1
µA
1

GHz
pF
dB
dB
dB
1