Panasonic 2SC4835G Specification Sheet

Transistors
2SC4835G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High forward transfer gain S
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).

2
21e
T
= 25°C
a
Symbol Rating
V 15
CBO
V 10
CEO
V
EBO
I 80
C
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
I V
CBO CB
I V
EBO EB
* 1, 2
h V
FE CE
f V
T CE
C V
ob CB
S 
2
V
21e CE
G V
UM CE
NF V
CE
Q R
50 to 100 80 to 130
■ Package
• Code
• Marking Symbol: 3M
• Pin Name
Unit
V
V
2 V
mA
mW
°C
°C
Conditions
= 10 µA, I = 0
E
= 100 µA, I = 0
B
= 10 V, I = 0
E
= 2 V, I = 0
C
= 8 V, I = 20 mA
C
= 8 V, I = 15 mA, f = 800 MHz
C
= 10 V, I = 0, f = 1 MHz
E
= 8 V, I = 15 mA, f = 800 MHz
C
= 8 V, I = 15 mA, f = 800 MHz
C
= 8 V, I = 7 mA, f = 800 MHz
C
S
100 to 200
SJC00368AED
SMini3-F2
1: Base
2: Emitter
3: Collector
Min Typ
15
10
50
5 6
0.7
11 14
15
1.3
Max Unit
V
V
µA
1
µA
1

200
GHz
1.2 pF
dB
dB
2.0 dB
1