Maximum Ratings; Electrical Characteristics - Toshiba TC9314F Manual

Cmos digital integrated circuit silicon monolithic
Table of Contents

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Maximum Ratings

Characteristics
Power supply voltage
Input voltage
Power dissipation
Operating temperature
Storage temperature

Electrical Characteristics

Characteristics
Operating power supply voltage
CPU operating power supply voltage
Memory retention voltage
Operating power supply current
Memory retention current
Crystal oscillation frequency
Crystal oscillation start time
3 V Constant Voltage Circuit
Characteristics
Constant voltage
(Ta = = = = 25°C)
Symbol
V
DD
V
IN
P
D
T
opr
T
stg
(unless otherwise specified, Ta = = = = 25°C, V
Symbol
V
DD1
V
DD2
V
HD
I
DD1
I
DD2
I
DD3
I
HD
f
XT
t
ST
Symbol
V
LCD
Rating
Unit
−0.3~6.0
V
−0.3~V
+ 0.3
V
DD
400
mW
−10~60
°C
−55~125
°C
Test
Test Condition
Circuit
At PLL and DA/AD converter
operation, Ta = −10~60°C
When CPU only in operation,
Ta = −10~60°C
When crystal oscillation
stopped (at CKSTP execution),
Ta = −10~60°C
In normal
At V
operation, at
DD
no load
output, and
=
when FM
At V
IN
DD
130 MHz
When CPU
At V
DD
only in
operation,
PLL off and
At V
DD
display lit
In standby
At V
mode, PLL off
DD
and only
crystal
oscillator
At V
DD
oscillating
Crystal oscillation stopped (at
CKSTP instruction execution)
= 1.8~5.5 V,
V
DD
Ta = −10~60°C
Crystal oscillation: 75 kHz
Test
Test Condition
Circuit
GND reference (V
LCD
61
= = = = 5.0 V)
DD
Min
Typ.
2.7
1.8
1.2
= 5.0 V
10
= 3.0 V
3
= 5.0 V
70
= 3.0 V
50
= 5.0 V
10
= 3.0 V
10
0.1
75
Min
Typ.
)
2.7
3.0
TC9314F
Max
Unit
5.5
V
5.5
V
5.5
V
20
mA
6
140
100
µA
20
20
µA
1.0
kHz
1.0
s
Max
Unit
3.3
V
2003-07-03

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