Transistors
2SD1450
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• Optimum for high-density mounting
• Allowing supply with the radial taping
• Low collector-emitter saturation voltage V
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
* 3
ON resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE1
* 3: R
Measurement circuit
on
Publication date: April 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol
Rating
V
25
CBO
V
20
CEO
V
12
EBO
I
0.5
C
I
1
CP
P
300
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 µA, I
V
I
CBO
C
= 1 mA, I
V
I
CEO
C
= 10 µA, I
V
I
EBO
E
I
V
CBO
CB
* 1
* 2
h
V
FE1
CE
h
V
FE2
CE
= 500 mA, I
* 1
V
I
CE(sat)
C
* 1
= 500 mA, I
V
I
BE(sat)
C
f
V
T
CB
C
V
ob
CB
R
on
R
S
200 to 350
300 to 500
1 kΩ
= 1 mA
I
B
V
V
V
B
V
A
V
=
B
× 1 000 (Ω)
R
on
− V
V
A
B
Unit
V
V
V
A
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 25 V, I
= 0
E
= 2 V, I
= 0.5 A
C
= 2 V, I
= 1 A
C
= 20 mA
B
= 20 mA
B
= 10 V, I
= −50 mA, f = 200 MHz
E
= 10 V, I
= 0, f = 1 MHz
E
T
No rank
400 to 800
200 to 800
f = 1 kHz
V = 0.3 V
SJC00222BED
4.0
±0.2
2.0
±0.2
0.75 max.
+0.20
0.45
–0.10
(2.5) (2.5)
1
2
3
Min
Typ
Max
25
20
12
100
200
800
60
0.13
0.40
1.2
200
10
0.6
Unit: mm
+0.20
0.45
–0.10
0.7
±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
Unit
V
V
V
nA
V
V
MHz
pF
Ω
1