Transistors
2SD1478A
Silicon NPN epitaxial planar type darlington
For low frequency amplification
Features
Forward current transfer ratio h
driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
* 1, * 2
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE
Publication date: October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
is designed high, which is appropriate to the
FE
= 25°C
a
Symbol
Rating
V
60
CBO
V
50
CEO
V
5
EBO
I
500
C
I
750
CP
P
200
C
T
150
j
T
-55 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= 100 mA, I
CBO
C
V
I
= 1 mA, I
CEO
C
V
I
= 100 mA, I
EBO
E
I
V
= 25 V, I
CBO
CB
I
V
= 4 V, I
EBO
EB
h
V
= 10 V, I
FE
CE
* 1
V
I
= 500 mA, I
CE(sat)
C
* 1
V
I
= 500 mA, I
BE(sat)
C
f
V
= 10 V, I
T
CB
Q
R
4 000 to 10 000
8 000 to 20 000
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Unit
V
Marking Symbol: 2O
V
V
Internal Connection
mA
mA
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= 0
C
= 500 mA
C
= 0.5 mA
B
= 0.5 mA
B
= -50 mA, f = 200 MHz
E
SJC00414AED
C
B
E
Min
Typ
Max
60
50
5
100
100
4 000
20 000
2.5
3.0
200
MHz
Unit
V
V
V
nA
nA
V
V
1