Transistors
2SD1820G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219G
■ Features
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
* 1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE1
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol
Rating
V
60
CBO
V
50
CEO
V
EBO
I
500
C
I
CP
P
150
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CBO
C
V
I
CEO
C
V
I
EBO
E
I
V
CBO
CB
* 1
* 2
h
V
FE1
CE
h
V
FE2
CE
* 1
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
85 to 170
120 to 240
XQ
XR
■ Package
• Code
• Marking Symbol: X
• Pin Name
Unit
V
V
5
V
mA
1
A
mW
°C
°C
Conditions
= 10 µA, I
= 0
E
= 2 mA, I
= 0
B
= 10 µA, I
= 0
C
= 20 V, I
= 0
E
= 10 V, I
= 150 mA
C
= 10 V, I
= 500 mA
C
= 300 mA, I
= 30 mA
B
= 10 V, I
= −50 mA, f = 200 MHz
E
= 10 V, I
= 0, f = 1 MHz
E
S
170 to 340
XS
SJC00373AED
SMini3-F2
1: Base
2: Emitter
3: Collector
Min
Typ
60
50
5
85
40
0.35
200
6
No-rank
85 to 340
X
Max
Unit
V
V
V
µA
0.1
340
0.60
V
MHz
15
pF
1