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Technical Specifications; For More Information - Samsung 840 EVO Specifications

Samsung solid state drive specifications

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Technical Specifications

Usage Application
Capacity
Dimensions(L x W x H)
Interface
Form Factor
Controller
NAND Flash Memory
DRAM Cache Memory
Performance**
TRIM Support
Garbage Collection
S.M.A.R.T
Security
Weight
Reliability
Power Consumption
Temperature
Humidity
Vibration
Shock
Warranty
System Configuration : Intel Core i7-3770 @ 3.4GHz, 4GB DDR3 SDRAM (2GBx2) 1333Mbps; Asus motherboard with Intel 7 Series Z77 Chipset;
Windows 7 Ultimate x64 SP1; IRST 11.2, MS performance guide pre-condition
* 840 EVO is not validated for data center usage.
** Sequential performance measurements based on CrystalDiskMark v.3.0.1. Random performance measurements based on
Iometer 2010. Performance may vary based on SSD's firmware version, system hardware & configuration
*** Sequential Write performance measurements reflect TurboWrite operation.
**** Power consumption measured with MobileMark 2007 in Windows 7. Values calculated using laptop computer and represent
system-level power consumption.
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. is a global leader in technology, opening
new possibilities for people everywhere. Through relentless innovation
and discovery, we are transforming the worlds of televisions, smartphones,
personal computers, printers, cameras, home appliances, LTE systems,
medical devices, semiconductors and LED solutions. We employ 236,000
people across 79 countries with annual sales of US$187.8 billion. To
discover more, please visit www.samsung.com.

For more information

For more information about Samsung SSD ,
visit www.samsung.com/ssd
To download the latest software & manuals,
visit www.samsung.com/samsungssd
Samsung SSD 840 EVO
Client PCs*
120GB, 250GB, 500GB, 750GB and 1TB
100 x 69.85 x 6.8 (mm)
SATA 6Gb/s (compatible with SATA 3Gb/s and 1.5Gb/s)
2.5-inch
Samsung 3-core MEX Controller
1x nm Samsung Toggle DDR 2.0 NAND Flash Memory (400Mbps)
256MB (120GB) or 512MB(250GB&500GB) or 1GB(750GB&1TB) LPDDR2
Sequential Read :
Sequential Write*** :
4KB Random Read (QD1) :
4KB Random Read (QD1) :
4KB Random Read (QD32) :
4KB Random Read (QD32) :
Yes (Requires OS Support)
Yes
Yes
AES 256-bit Full Disk Encryption (FDE)
Max. 53g (1TB)
MTBF : 1.5 million hours
Average : 0.1W****(Typical)
Idle : 0.045W (Typical, DIPM ON)
Operating : 0C to 70C
Non-Operating : -55C to 95C
5% TO 95%, non-condensing
Non-Operating : 20 ~ 2000Hz, 20G
Non-Operating : 1500G, duration 0.5m sec, 3 axis
3 years limited
Max. 540MB/s
Max. 520 MB/s(250GB/ 500GB/ 750GB/ 1TB)
Max. 410 MB/s(120GB)
Max. 10,000 IOPS
Max. 33,000 IOPS
Max. 98,000 IOPS (500GB/750GB/1TB)
Max. 97,000 IOPS (250GB)
Max. 94,000 IOPS (120GB)
Max. 90,000 IOPS (500GB/750GB/1TB)
Max. 66,000 IOPS (120GB)
Max. 35,000 IOPS (120GB)
Copyright © 2013 Samsung Electronics Co. Ltd. All rights reserved.
Samsung and MagicInfo are registered trademarks of Samsung
Electronics Co. Ltd. Specifications and designs are subject to
change without notice. Non-metric weights and measurements
are approximate. All data were deemed correct at time of creation.
Samsung is not liable for errors or omissions. All brand, product,
service names and logos are trademarks and/or registered
trademarks of their respective owners and are hereby recognized
and acknowledged.
Samsung Electronics Co., Ltd.
416, Maetan 3-dong,
Yeongtong-gu
Suwon-si, Gyeonggi-do 443-772,
Korea
www.samsung.com

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