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SAFETY CONSIDERATIONS ]
SAFETY SYMBOLS
Instruction manual symbol: the product
will be marked with this symbol when it is
necessary for the user to refer to the
instruction manual in order to protect the
product against damage.
GENERAL - This
product
documentation
must
be
familiarization
with
safety
instructions before operation.
and
related
reviewed
for
markings
and
r CAUTION
I
The
CAUTION
sign
denotes a hazard.
It
calls
attention
to
an
operating
procedure, practice, or the
like, which, if not correctly
performed
or
adhered
to,
could result in damage to or
destruction of part or all of
the product. Do not proceed
beyond a CAUTION sign until
the indicated condibons are
fully understood and met.
I
CAUTION]
ST A TIC SENSITIVE DEVICES
WARNING,
Indicates hazardous voltages.
Indicates
earth
(ground)
terminal
(sometimes used in manual to indicate
circuit common connected to grounded
chassis).
The
WARNING
sign
denotes a hazard.
It
calls
attention
to
a
procedure,
practice, or the like, which,
if
not correctly performed or
adhered to, could result in
injury.
Do
not
proceed
beyond a
",7
ARNING
sign
until the indicated conditions
are fully understood and Inet.
When any two materials make contact,
their surfaces are crushed on the atomic
level and electrons pass back and forth
between the objects. On separation, one
surface comes away with excess electrons
(negatively charged) while the other is
electron deficient (positively charged). The
level of charge that is developed depends on
the type of material. Insulators can easily
build up charges in excess of 20,000 volts.
A
person working at a bench or walking
across a floor can build up a charge of
many thousands of volts. The amount of
static voltage developed depends on the
rate of generation of the charge and the
capacitance of the body holding the charge.
If the discharge happens to go through a
semiconductor device and the transient
current pulse is not effectively diverted by
protection circuitry, the resulting current
flow through the device can raise the
temperature of internal junctions to their
melting points. MOS structures are also
susceptible to dielectric damage due to high
fields.
Feb 85
v
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