Panasonic Transistors 2SB1722G Specifications

Transistors
2SB1722G
Silicon PNP epitaxial planar type
For high breakdown voltage low-frequency amplification
■ Features
• High collector-emitter voltage (Base open) V
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol Rating
−100
V
CBO
−100
V
CEO
−5
V
EBO
−20
I
C
−50
I
CP
P 125
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
I V
CEO CE
h V
FE CE
V I
CE(sat) C
f V
T CB
Unit
V
V
V
mA
mA
mW
°C
°C
Conditions
= −10 µA, I = 0
E
= −1 mA, I = 0
B
= −10 µA, I = 0
C
= −50 V, I = 0
E
= −50 V, I = 0
B
= −10 V, I = −2 mA
C
= −10 mA, I = −1 mA
B
= −5 V, I = 2 mA, f = 200 MHz
E
SJC00389AED
■ Package
• Code
SSMini3-F3
• Marking Symbol: 4R
• Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
−100
−100
−5
−100
−1
200 700
− 0.3
200
Unit
V
V
V
nA
µA

V
MHz
1