Transistors
2SB0621A
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SD0592A
Features
Low collector-emitter saturation voltage V
High transition frequency f
T
Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Publication date : October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol
Rating
V
–60
CBO
V
–50
CEO
V
–5
EBO
I
–1
C
I
–1.5
CP
P
750
C
T
150
j
T
–55 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= –10 mA, I
CBO
C
V
I
= –2 mA, I
CEO
C
V
I
= –10 mA, I
EBO
E
I
V
= –20 V, I
CBO
CB
h
*
V
= –10 V, I
FE1
CE
h
V
= –5 V, I
FE2
CE
V
I
= –500 mA, I
CE(sat)
C
V
I
= –500 mA, I
BE(sat)
C
f
V
= –10 V, I
T
CB
C
V
= –10 V, I
ob
CB
Q
R
85 to 170
120 to 240
SJC00416AED
Package
Code
TO-92B-B1
Pin Name
1. Emitter
2. Collector
Unit
3. Base
V
V
V
A
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= –500 mA
C
= –1 A
C
= –50 mA
B
= –50 mA
B
= 50 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
S
170 to 340
Min
Typ
Max
Unit
–60
–50
–5
– 0.1
85
340
50
– 0.2
– 0.4
– 0.85
–1.2
200
MHz
20
30
V
V
V
mA
V
V
pF
1