Panasonic Transistors 2SA2162G Specifications

Transistors
2SA2162G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6036G
 Features
 Low collector-emitter saturation voltage V
 SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
V –15
CBO
V –12
CEO
V –5
EBO
I –500
C
I –1
CP
P 100
C
T 125
j
T –55 to +125
stg
= 25°C±3°C
a
Symbol
V I = –10 mA, I
CBO C
V I = –1 mA, I
CEO C
V I = –10 mA, I
EBO E
I V = –10 V, I
CBO CB
h V = –2 V, I
FE CE
V I = –200 mA, I
CE(sat) C
f V = –2 V, I
T CB
C V = –10 V, f = 1 MHz
ob CB
SJC00384AED
 Package
 Code
SSSMini3-F2
 Marking Symbol: 2U
 Pin Name
1. Base
2. Emitter
Unit
3. Collector
V
V
V
mA
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= –10 mA
C
= –10 mA
B
= 10 mA, f = 200 MHz
E
Min Typ Max Unit
–15
–12
–5
– 0.1
270 680
–250 mV
200 MHz
4.5
V
V
V
mA

pF
1