Panasonic Transistors 2SA2161J Specifications

Transistors
2SA2161J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037J
■ Features
• Low collector-emitter saturation voltage V
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
−15
V
CBO
−12
V
CEO
−5
V
EBO
−500
I
C
−1
I
CP
P 125
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
= −10 µA, I
V I
CBO C
= −1 mA, I
V I
CEO C
= −10 µA, I
V I
EBO E
I V
CBO CB
= −2 V, I
h V
FE CE
= −200 mA, I
V I
CE(sat) C
f V
T CB
C V
ob CB
SJC00312BED
0.27
Unit
V
V
V
mA
A
mW
Marking Symbol: 2U
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= −15 V, I = 0
E
= −10 mA
C
= −10 mA
B
= −2 V, I = 10 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
+0.05
1.60
–0.03
0.12
1.00
±0.05
3
1 2
±0.02
(0.50)(0.50)
5˚
EIAJ: SC-89, JEDEC: SOT-490
SSMini3-F1 Package
Min Typ Max
−15
−12
−5
− 0.1
270 680
−250
200
4.5
Unit: mm
+0.03
–0.01
1: Base
2: Emitter
3: Collector
Unit
V
V
V
µA

mV
MHz
pF
1