Panasonic MA2SP050G Specification Sheet

PIN diodes
MA2SP050G
Silicon epitaxial planar type
For high frequency attenuator
■ Features
• High performance forward current I
namic resistance r
f
• Small terminal capacitance C
• Miniature package and surface mounting type
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
controlled forward dy-
F
t
= 25°C
a
Symbol Rating
V 60
R
I 50
F
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R
C V
t
r I
f F
■ Package
• Code
• Pin Name
■ Marking Symbol: 6P
Unit
V
mA
°C
°C
Conditions
= 10 mA
= 60 V
R
= 0 V, f = 1 MHz
R
= 10 mA, f = 100 MHz
SKL00030AED
SSMini2-F4
1: Anode
2: Cathode
Min Typ Max Unit
1.0 V
100 nA
2.4 pF
Ω
5.5
1