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Panasonic MA2J729 (MA729) Specification Sheet
Panasonic MA2J729 (MA729) Specification Sheet

Panasonic MA2J729 (MA729) Specification Sheet

Schottky barrier diodes (sbd) silicon epitaxial planar type

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Schottky Barrier Diodes (SBD)
MA2J729
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• Forward current (Average) I
possible
• High-density mounting is possible
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Peak forward current
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
4. * : t
measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA729)
= 200 mA rectification is
F(AV)
= 25°C
a
Symbol
Rating
V
30
R
V
30
RRM
I
300
FM
I
200
F(AV)
I
1
FSM
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 200 mA
V
I
F
F
I
V
R
R
C
V
t
R
= I
t
I
rr
F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
Unit
V
1: Anode
V
2: Cathode
mA
EIAJ: SC-76
mA
Marking Symbol: 2B
A
°C
°C
Conditions
= 30 V
= 0 V, f = 1 MHz
= 100 mA
R
= 0.1 I
= 100 Ω
, R
R
L
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00015BED
1.25
±0.1
0.7
0.35
±0.1
1
0 to 0.1
2
+0.1
0.16
0.5
±0.1
–0.06
SMini2-F1 Package
Min
Typ
Max
0.55
50
30
3.0
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr
R
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
±0.1
Unit
V
µA
pF
ns
1

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Summary of Contents for Panasonic MA2J729 (MA729)

  • Page 1 Schottky Barrier Diodes (SBD) MA2J729 (MA729) Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • Forward current (Average) I F(AV) possible • High-density mounting is possible ■ Absolute Maximum Ratings T Parameter Symbol Reverse voltage Repetitive peak reverse voltage Peak forward current...
  • Page 2 MA2J729  V 100°C 25°C = 150°C −20°C −1 −2 ( V ) Forward voltage V  T 15 V = 30 V −40 ( °C ) Ambient temperature T  V = 150°C 100°C 25°C ( V ) Reverse voltage V ...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.

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Ma729