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Panasonic MA2J7280G Specification Sheet
Panasonic MA2J7280G Specification Sheet

Panasonic MA2J7280G Specification Sheet

Schottky barrier diodes (sbd) silicon epitaxial planar type

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Schottky Barrier Diodes (SBD)
MA2J7280G
Silicon epitaxial planar type
For super high speed switching
For wave detection
■ Features
• Low forward voltage V
• Small reverse current I
R
• Small temperature coefficient of forward characteristic
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. * : t
measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
and good wave detection efficiency η
F
= 25°C
a
Symbol
Rating
V
30
R
V
30
RM
I
30
F
I
150
FM
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F1
F
V
I
F2
F
I
V
R
C
V
t
t
I
rr
F
I
rr
η
V
R
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
■ Package
• Code
• Pin Name
■ Marking Symbol: 2A
Unit
V
V
mA
mA
°C
°C
Conditions
= 1 mA
= 30 mA
= 30 V
R
= 1 V, f = 1 MHz
R
= I
= 10 mA
R
= 1 mA, R
= 100 Ω
L
= 3 V
, f = 30 MHz
IN
(peak)
= 3.9 kΩ, C
= 10 pF
L
L
Input Pulse
t
t
r
p
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00171AED
SMini2-F3
1: Anode
2: Cathode
Min
Typ
1.5
1.0
65
Output Pulse
t
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Max
Unit
0.4
V
1.0
300
nA
pF
ns
%
1

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Summary of Contents for Panasonic MA2J7280G

  • Page 1 This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA2J7280G Silicon epitaxial planar type For super high speed switching For wave detection ■ Features • Low forward voltage V and good wave detection efficiency η • Small reverse current I •...
  • Page 2 This product complies with the RoHS Directive (EU 2002/95/EC). MA2J7280G  V 75°C 25°C = 125°C −20°C −1 −2 ( V ) Forward voltage V  T = 30 V 10 V −1 −2 −40 ( °C ) Ambient temperature T ...
  • Page 3 This product complies with the RoHS Directive (EU 2002/95/EC). SMini2-F3 1.25 ±0.10 0.50 ±0.05 0.35 ±0.05 5° +0.05 0.13 − 0.02 0 to 0.05 SKH00171AED MA2J7280G Unit: mm...
  • Page 4 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.