Panasonic 2SD1149 Specification Sheet

Transistors
2SD1149
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• High emitter-base voltage (Collector open) V
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: January 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
CE(sat)
EBO
= 25°C
a
Symbol Rating
V 100
CBO
V 100
CEO
V 15
EBO
I 20
C
I 50
CP
P 200
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 µA, I
V I
CBO C
= 1 mA, I
V I
CEO C
= 10 µA, I
V I
EBO E
I V
CBO CB
= 60 V, I
I V
CEO CE
*
h V = 10 V, I
FE CE
= 10 mA, I
V I
CE(sat) C
f V
T CB
R S
400 to 800 600 to 1 200
SJC00208BED
10˚
Unit
V
V
V
mA
Marking symbol ： 1V
mA
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 60 V, I = 0
E
= 0
B
= 2 mA
C
= 1 mA
B
= 10 V, I = −2 mA, f = 200 MHz
E
+0.10
0.40
–0.05
0.16
3
2
1
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Min Typ Max
100
100
15
0.1
1.0
400 1 200
0.05 0.20
100
Unit: mm
+0.10
–0.06
Unit
V
V
V
µA
µA

V
MHz
1