Transistors
2SD0814A
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: January 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
(2SD814A)
CEO
= 25°C
a
Symbol
Rating
V
185
CBO
V
185
CEO
V
5
EBO
I
50
C
I
100
CP
P
200
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 µA, I
V
I
CEO
C
= 10 µA, I
V
I
EBO
E
I
V
CBO
CB
*
h
V
FE
CE
= 30 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
NV
V
CE
R
g
Q
R
90 to 155
130 to 220
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
V
mA
Marking Symbol : L
mA
mW
°C
°C
Conditions
= 0
B
= 0
C
= 100 V, I
= 0
E
= 5 V, I
= 10 mA
C
= 3 mA
B
= 10 V, I
= −10 mA, f = 200 MHz
E
= 10 V, I
= 0, f = 1 MHz
E
= 10 V, I
= 1 mA, G
= 80 dB
C
V
= 100 kΩ, Function = FLAT
S
185 to 330
SJC00196CED
+0.10
0.40
–0.05
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
Min
Typ
Max
185
5
90
150
2.3
150
Unit: mm
+0.10
0.16
–0.06
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Unit
V
V
µA
1
330
1
V
MHz
pF
mV
1