Download Print this page

Panasonic 2SD0814A Specification Sheet

Silicon npn epitaxial planar type transistors

Advertisement

Quick Links

Transistors
2SD0814A
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: January 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
(2SD814A)
CEO
= 25°C
a
Symbol
Rating
V
185
CBO
V
185
CEO
V
5
EBO
I
50
C
I
100
CP
P
200
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 µA, I
V
I
CEO
C
= 10 µA, I
V
I
EBO
E
I
V
CBO
CB
*
h
V
FE
CE
= 30 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
NV
V
CE
R
g
Q
R
90 to 155
130 to 220
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
V
mA
Marking Symbol : L
mA
mW
°C
°C
Conditions
= 0
B
= 0
C
= 100 V, I
= 0
E
= 5 V, I
= 10 mA
C
= 3 mA
B
= 10 V, I
= −10 mA, f = 200 MHz
E
= 10 V, I
= 0, f = 1 MHz
E
= 10 V, I
= 1 mA, G
= 80 dB
C
V
= 100 kΩ, Function = FLAT
S
185 to 330
SJC00196CED
+0.10
0.40
–0.05
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
Min
Typ
Max
185
5
90
150
2.3
150
Unit: mm
+0.10
0.16
–0.06
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Unit
V
V
µA
1
330
1
V
MHz
pF
mV
1

Advertisement

loading

Summary of Contents for Panasonic 2SD0814A

  • Page 1 Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification ■ Features • High collector-emitter voltage (Base open) V • Low noise voltage NV • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
  • Page 2 2SD0814A  T ( °C ) Ambient temperature T  I CE(sat) = 10 = 75°C 25°C −25°C 0.01 ( mA ) Collector current I  V f = 1 MHz = 25°C ( V ) Collector-base voltage V  V = 25°C...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.