Panasonic MALD068XG Specification Sheet

Zener Diodes
MALD068XG
Silicon planar type
For ESD protection
 Overview
MALD068XG is optimal for cell phones and AV application, all types of
I/O circuits.
It is possible to protect against forward and reverse surges.
 Features
 High resistance to surge voltages: 20 kV guaranteed
 Low terminal capacitance C
retention of signal waveforms.
 Absolute Maximum Ratings T
Parameter
* 1
Peak pulse current
* 1
Peak pulse power
* 2
Total power dissipation
* 3
Junction temperature
Storage temperature
Electrostatic discharge
Note) * 1: Test method: IEC61000-4-5 (tp = 8/20 µs, Unrepeated)
* 2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
* 3: P = 150 mW achieved with a printed circuit board.
T
 Electrical Characteristics T
Parameter
* 1
Breakdown voltage
* 2
Clamping voltage
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. * 1: V guaranted 20 ms after current flow.
BR
* 2: P ulse Waveform
3. Absolute frequency of input and output is 5 MHz
Publication date: January 2009
This product complies with the RoHS Directive (EU 2002/95/EC).
for low loss, low distortion, and good
t
= 25°C
a
Symbol Rating
I 3
PP
P 33
PP
P 150
T
T 150
j
T –55 to +150
stg
ESD ±20
= 25°C±3°C
a
Symbol
V I = 5 mA
BR Z
V I = 3.0 A, tp = 8/20 µs
C PP
I V = 3.5 V
R R
C V = 0 V, f = 1 MHz
t R
100
90
T2
50
10
T
T1
SKE00050BED
 Package
 Code
SSSMini2-F3
 Pin Name
1: Cathode
2: Cathode
 Marking Symbol: A
Unit
A
W
mW
°C
°C
kV
Conditions
Front time:
T1 = 1.25 × T = 8 µs ±20%
Time to half value:
T2 = 20 µs ±20%
t
Min Typ Max Unit
5.8 7.2 8.8
11.0
500
25
V
Ω
nA
pF
1