GE 4PE350A3 Instructions Manual page 46

Color camera channel
Table of Contents

Advertisement

EBI-6351
Sketch B
COLOR CAMERA
COMMON COLLECTOR AMPLIFIER
This amplifier is commonly referred to as
an emitter follower. A positive -going volt-
age waveform applied to the base of this
amplifier results in a voltage waveform on
its emitter which is of the same phase as
that on its base. The gain for this amplifier
is approximately 0.98 as shown in Sketch C.
Sketch C
COMMON BASE AMPLIFIER
A positive -going voltage waveform applied
to the emitter of this amplifier results in a
voltage waveform on its collector which is
of the same phase as that on its emitter as
shown in Sketch D.
Sketch D
32
Transistor Abuses
GENERAL
A manufacturer's transistor specification
sheet not only describes the device, but,
what is more important, warns of its limita-
tions and assumes that the user is somewhat
familiar with the type of device described
as well as the area of its application. Where
this knowledge is lacking, additional informa-
tion is available in the form of application
notes, technical tips, articles in technical
periodicals, promotional material, manuals,
etc.
However, no matter how carefully he pre-
pares his specification sheet, the manufac-
turer cannot guarantee his device against
mechanical and electrical abuses.
Although transistors have acquired a repu-
tation for high reliability and ruggedness
there are limitations that the user must
become familiar with if he is to maintain
reliable semiconductor circuits.
The following are some of the more com-
mon abuses to which transistors are sub-
jected.
MECHANICAL ABUSES
1. Shock
Semiconductor material
is hard and
brittle and can be damaged by high impact
shock. For example, dropping a transistor
42 inches onto a hardwood bench subjects
the device to around 500g; a drop of 30
inches onto concrete may increase the im-
pact shock from 7000 to 20,000g; snapping
rather than sliding a transistor into a clip
causes a shock of 600g; and carelessly clip-
ping a transistor lead may generate a shock
wave of several thousand g. Any high im-
pact shock, therefore, can cause fracture
of the semiconductor material, or lead break-
age, resulting in complete ruin of the tran-
sistor.
2. Lead Bending
Several sharp back -and -forth bends of
a wire will usually cause it to break, or at
least fracture. This is especially true of

Advertisement

Table of Contents
loading

This manual is also suitable for:

4pc19d3

Table of Contents